XLD905-75W-P 905nm 75W High Power Pulsed Laser Diode uses stacked tunnel junction technology to achieve a high output power of 75W. It has a total of 10 p-n junctions stacked on top of each other. Each p-n junction is responsible for amplifying the output power of the previous junction. The stacking of p-n junctions results in a more significant contact area between the electrodes and the semiconductor layers, which leads to a higher output power. The stacked tunnel junction technology is a promising approach to build high output power laser diodes.

905 nm laser diode

Parameters	Symbol	Unit	Typical Numerical Value
Optical Parameter (@25°C)
central wavelength	λ	nm	905
tolerance	λo	nm	± 10
spectral width	△λ	nm	≤ 5
working mode	Pulsed
power	Po	W	75
luminous size	L	μm∙ μm	200*10
beam-divergence angle	θ⊥	°	≤ 28
beam-divergence angle	θ∥	°	≤ 10
beam directivity	θ	°	≤±1.5
Electrical Properties (@25°C)
threshold current	Ith	A	1
working current	Iop	A	30
working voltage	Vop	V	24
working pulse width	t	ns	100
repetition frequency	f	kHz	5
duty cycle	D	-	0.05%
Thermal Property
working temp	Tc	ºC	-40~70
storage temp	Tstg	ºC	-40~85
wavelength temperature coefficient	--	nm/ºC	0.28
welding temperature	Ts	ºC	260

Note:

[1] The definition of θ⊥ and θ∥ is the angle of 50% peak value。

[2] All the test date is based on 25°, the working life time will be influenced when the working temperature is over temperature.

The 905nm 75W High Power Pulsed Laser Diode packaging of a laser diode is essential to maintain the stability and reliability of the laser diode. The traditional packaging approach involves hermetically sealing the laser diode in a metal package. However, this approach is costly and time-consuming. The advent of low-cost plastic packaging has opened new horizons in the field of laser diodes. Plastic packaging is not only cost-effective but also allows for faster production. The 905nm 75W High Power Pulsed Laser Diode uses low-cost plastic packaging to reduce the overall cost of the laser diode. The packaging is designed to be cost-effective, easy to use, and highly reliable. The plastic packaging provides adequate protection to the laser diode and helps maintain its stability.

905nm 15W High Power IR Laser Diode

The light source size of a laser diode is the physical size of the semiconductor laser cavity. The 905nm 75W Pulsed Laser Diode has a light source size of 200um*10um. The small light source size is highly beneficial in applications where a small beam size is required. The small beam size allows for high resolution and highly focused laser output. The Pulsed Laser Diode is an excellent choice for applications such as laser scanning, where a high-resolution beam is required.

905nm 75W Laser Diode

905nm 75W High Power Pulsed Laser Diode Overall Dimensions (unit: mm)

The pulse width of a laser diode is an essential parameter that determines the performance of the laser diode. The pulse width is defined as the duration of the laser pulse. This High Power Pulsed Laser Diode features an adjustable pulse width ranging from 1-100ns. Such a wide range of pulse width allows the users to adjust the laser diode's performance to suit their specific requirements. The adjustable pulse width feature is highly useful in applications such as laser range finding, laser scanning, and laser weapons.

905 nm laser diode

Parameter Curve:


1.Power - Current Relationship	2.Current - Voltage Relationship

3.Curve of Spectrum	4.Wavelength/Temperature Curve

Endurance	6.Luminous Effect Picture

LASER DIODE

Vertical Divergence Angle

Horizontal Divergence Angle

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